document number: 83552 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.6, 25-jan-08 1 optocoupler, phototransistor output, high reliability, 5300 v rms , 110 c rated sfh1617a vishay semiconductors description the 110 c rated sfh1617a (dip) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. these couplers have a gaas infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic dip-4 package. the coupling devices are designed for signal transmission between two electrically separated circuits. the couplers are end-stacka ble with 2.54 mm spacing. creepage and clearance distances of > 8.0 mm are achieved with option 6. this version complies with iec 60950 (din vde 0805) for reinforced insulation up to an operation voltage of 400 v rms or dc. specifications subject to change. features ? operating temperature from - 55 c to + 110 c ? good ctr linearity depending on forward current ? isolation test voltage, 5300 v rms ? high collector emitter voltage, v ceo = 70 v ? low saturation voltage ? fast switching times ? low ctr degradation ? temperature stable ? low coupling capacitance ? end stackable, 0.100" (2.54 mm) spacing ? high common mode interference immunity ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications ? ac adapter ?smps ?plc ? factory automation ? game consoles agency approvals ? ul1577, file no. e52744 system code h or j, double protection ? csa 93751 ? din en 60747-5-2 (vde 0884)/din en 60747-5-5 pending available with option 1 ? bsi iec 60950; iec 60065 1 2 4 3 e c a c 17907 order information part remarks sfh1617a-1 ctr 40 to 80 %, dip-4 sfh1617a-2 ctr 63 to 125 %, dip-4 sfh1617a-3 ctr 100 to 200 %, dip-4 sfh1617a-4 ctr 160 to 320 %, dip-4 absolute maximum ratings (1) parameter test condition symbol value unit input reverse voltage v r 6.0 v dc forward current i f 60 ma surge forward current t 10 s i fsm 2.5 a derate linearly from 25 c 0.95 mw/c
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83552 2 rev. 1.6, 25-jan-08 sfh1617a vishay semiconductors optocoupler, phototransistor output, high reliability, 5300 v rms , 110 c rated notes (1) t amb = 25 c, unless otherwise specified. stresses in excess of the absolute maximum ratings can cause per manent damage to the device. functional operation of the device is not implied at these or any other c onditions in excess of t hose given in the operational sections of this document. exposure to abs olute maximum ratings for extended periods of the time can adversely affect reliability. (2) refer to wave profile for solderin g conditions for through hole devices. fig. 1 - permissible power diss ipation vs. ambient temperature output collector emitter voltage v ce 70 v emitter collector voltage v ec 7.0 v collector current i c 50 ma t 1.0 ms i c 100 ma derate linearly from 25 c 1.54 mw/c coupler isolation test voltage between emitter and detector, refer to climate din 40046, part 2, nov. 74 v iso 5300 v rms isolation resistance v io = 500 v, t amb = 25 c r io 10 12 v io = 500 v, t amb = 100 c r io 10 11 storage temperature range t stg - 55 to + 150 c ambient temperature range t amb - 55 to + 110 c soldering temperature (2) max. 10 s, dip soldering distance to seating plane 1.5 mm t sld 260 c absolute maximum ratings (1) parameter test condition symbol value unit 0 50 100 150 200 0 204060 8 0 100 120 1 8 77 8 p - po w er dissipation (m w ) tot detector led t am b - am b ient temperat u re (c)
document number: 83552 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.6, 25-jan-08 3 sfh1617a optocoupler, phototransistor output, high reliability, 5300 v rms , 110 c rated vishay semiconductors notes (1) the thermal model is represented in the ther mal network below. each resistance value gi ven in this model can be used to calcula te the temperatures at each node for a given oper ating condition. the thermal resistance fr om board to ambient will be dependent on th e type of pcb, layout and thickness of copper traces . for a detailed explanation of the thermal model, please referenc e vishay's thermal characteristics of optocouplers application note. (2) for 2 layer fr4 board (4" x 3" x 0.062). thermal characteristics (1) parameter test condition symbol value unit led power dissipation at 25 c p diss 100 mw output power dissipation at 25 c p diss 150 mw maximum led junction temperature t jmax 125 c maximum output die junction temperature t jmax 125 c thermal resistance, junction emitter to board eb 173 c/w thermal resistance, junction emitter to case ec 149 c/w thermal resistance, j unction detector to board db 111 c/w thermal resistance, junction detector to case dc 127 c/w thermal resistance, junction emitter to junction detector ed 95 c/w thermal resistance, board to ambient (2) ba 195 c/w thermal resistance, case to ambient (2) ca 3573 c/w electrical characteristics parameter test condition part symbol min. typ. max. unit input forward voltage i f = 60 ma v f 1.25 1.65 v reverse current v r = 6.0 v i r 0.01 10 a capacitance v r = 0 v, f = 1.0 mhz c o 13 pf output collector emitter capacitance v ce = 5.0 v, f = 1.0 mhz c ce 5.2 pf collector emitter leakage current v ce = 10 v sfh1617a-1 i ceo 2.0 50 na sfh1617a-2 i ceo 2.0 50 na sfh1617a-3 i ceo 5.0 100 na sfh1617a-4 i ceo 5.0 100 na coupler t a ca t c t jd t je t b ec eb dc db ba de t a 19996 package
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83552 4 rev. 1.6, 25-jan-08 sfh1617a vishay semiconductors optocoupler, phototransistor output, high reliability, 5300 v rms , 110 c rated note t amb = 25 c, unless otherwise specified. minimum and maximum values are testing requi rements. typical values ar e characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. collector emitter saturation voltage i f = 10 ma, f = 1.0 mhz v cesat 0.4 0.25 v coupling capacitance c c 0.4 pf electrical characteristics parameter test condition part symbol min. typ. max. unit current transfer ratio parameter test condition part symbol min. typ. max. unit i c /i f i f = 10 ma, v ce = 5.0 v sfh1617a-1 ctr 40 80 % sfh1617a-2 ctr 63 125 % sfh1617a-3 ctr 100 200 % sfh1617a-4 ctr 160 320 % i f = 1.0 ma, v ce = 5.0 v sfh1617a-1 ctr 13 30 % sfh1617a-2 ctr 22 45 % sfh1617a-3 ctr 34 70 % sfh1617a-4 ctr 56 90 % switching characteristics parameter test condition part symbol min. typ. max. unit non-saturated turn-on time i f = 10 ma, v cc = 5.0 v, r l = 75 t on 3.0 s rise time i f = 10 ma, v cc = 5.0 v, r l = 75 t r 2.0 s turn-off time i f = 10 ma, v cc = 5.0 v, r l = 75 t off 2.3 s fall time i f = 10 ma, v cc = 5.0 v, r l = 75 t f 2.0 s cut-off frequency i f = 10 ma, v cc = 5.0 v f ctr 250 khz saturated turn-on time i f = 20 ma sfh1617a-1 t on 3.0 s i f = 10 ma sfh1617a-2 t on 4.2 s sfh1617a-3 t on 4.2 s i f = 5.0 ma sfh1617a-4 t on 6.0 s rise time i f = 20 ma sfh1617a-1 t r 2.0 s i f = 10 ma sfh1617a-2 t r 3.0 s sfh1617a-3 t r 3.0 s i f = 5.0 ma sfh1617a-4 t r 4.6 s saturated turn-off time i f = 20 ma sfh1617a-1 t off 18 s i f = 10 ma sfh1617a-2 t off 23 s sfh1617a-3 t off 23 s i f = 5.0 ma sfh1617a-4 t off 25 s fall time i f = 20 ma sfh1617a-1 t f 11 s i f = 10 ma sfh1617a-2 t f 14 s sfh1617a-3 t f 14 s i f = 5.0 ma sfh1617a-4 t f 15 s
document number: 83552 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.6, 25-jan-08 5 sfh1617a optocoupler, phototransistor output, high reliability, 5300 v rms , 110 c rated vishay semiconductors note as per iec 60747-5-2, 7.4.3.8.1, this opt ocoupler is suitable for "saf e electrical insulation" onl y within the safety ratings . compliance with the safety ratings shall be ensured by means of protective circuits. typical characteristics t amb = 25 c, unless otherwise specified fig. 2 - forward voltage vs. forward current fig. 3 - collector current vs. collector emitter voltage safety and insulation ratings parameter test condition symbol min. typ. max. unit climatic classification (according to iec 68 part 1) 55/110/21 comparative tracking index cti 175 399 v iotm 10000 v v iorm 890 v p so 400 mw i si 275 ma t si 175 c creepage distance standard dip-4 7 mm clearance distance standard dip-4 7 mm creepage distance 400 mil dip-4 8 mm clearance distance 400 mil dip-4 8 mm insulation thickness, reinforced rated per iec 60950 2.10.5.1 0.4 mm 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0.10 1.00 10.00 100.00 i f - for w ard c u rrent (ma) 17592 v - for w ard v oltage ( v ) f 110 c 0 c 50 c 25 c - 55 c 0 5 10 15 20 25 30 35 40 45 50 01 4 8 10 11 12 13 14 15 v - collector emitter v oltage ( v ) 1 8 733 i - collector c u rrent (ma) c ce i = 30 ma i = 1 ma i = 5 ma i = 10 ma i = 15 ma i = 20 ma f f f f f f 23 67 5 9
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83552 6 rev. 1.6, 25-jan-08 sfh1617a vishay semiconductors optocoupler, phototransistor output, high reliability, 5300 v rms , 110 c rated fig. 4 - collector to emitter dark current vs. ambient temperature fig. 5 - normalized current vs. collector emitter saturation voltage fig. 6 - normalized current transfer ratio vs. ambient temperature fig. 7 - normalized ctr vs. temperature fig. 8 - normalized ctr vs. forward current fig. 9 - normalized ctr vs. forward current 0.10 1 10 100 1000 10000 - 75 - 25 25 75 125 t - am b ient temperat u re (c) 1 8 734 ce0 i (na) am b 40 v 12 v 24 v 0 10 20 30 0.0 0.1 0.2 0.3 0.4 0.5 0.6 v - collector to emitter v oltage ( v ) 1 8 735 i (ma) 5 ma 1 ma c ce 25 ma 2 ma 10 ma 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 - 55 - 35 - 15 5 25 45 65 8 5 105 125 t am b - am b ient temperat u re (c) 17593 ctr - n ormalized o u tp u t c u rrent n ormalized to i f = 10 ma, t am b = 25 c, v ce = 0.4 v , sat u rated n orm i f = 5 ma 10 ma 1 ma 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 - 55 - 35 - 15 5 25 45 65 8 5 105 125 t - am b ient temperat u re (c) 1 8 737 ctr - n ormalized o u tp u t c u rrent 10 ma 5 ma 1 ma n ormalized to: temp = 25 c at i = 10 ma and v = 5 v n orm am b f ce 1.1 0.9 0.7 0.5 0.3 0.1 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 0.10 1.00 10.00 100.00 i f - for w ard c u rrent (ma) 17594 ctr - n ormalized o u tp u t c u rrent n orm n ormalized to i f = 10 ma, t am b = 25 c, v ce = 5 v , non-sat u rated - 4 - 1 - 3 - 2 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 0.10 1.00 10.00 100.00 i f - for w ard c u rrent (ma) 17595 - 4 - 1 - 3 - 2 ctr - n ormalized o u tp u t c u rrent n orm n ormalized to i f = 10 ma, t am b = 25 c, v ce = 0.4 v , sat u rated
document number: 83552 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.6, 25-jan-08 7 sfh1617a optocoupler, phototransistor output, high reliability, 5300 v rms , 110 c rated vishay semiconductors fig. 10 - forward resistance vs. forward current fig. 11 - forward resistance vs. forward current package dimensions in inches (millimeters) 1 10 100 1000 0.1 1.0 10.0 100.0 r - load resistance (k ) 1 8 340 s w itching time ( s) t off t on p u lse w idth = 100 ms i = 10 ma d u ty cycle = 50 % l f 1 10 100 1000 0.1 1 10 100 r - load resistance (k ) 1 8 341 s w itching time (ms) t t p u lse w ith = 100 ms i = 10 ma d u ty cycle = 50 % l f rise fall i17 8 027 0.255 (6.4 8 ) 0.26 8 (6. 8 1) 1 2 4 3 0.179 (4.55) 0.190 (4. 8 3) pin one id 0.030 (0.76) 0.045 (1.14) 4 typ. 0.100 (2.54) 0.130 (3.30) 0.150 (3. 8 1) 0.020 (0.50 8 ) 0.035 (0. 8 9) 10 3 to 9 0.01 8 (0.46) 0.022 (0.56) 0.00 8 (0.20) 0.012 (0.30) 0.031 (0.79) typ. 0.050 (1.27) typ. 0.300 (7.62) typ. 0.110 (2.79) 0.130 (3.30) 0.230 (5. 8 4) 0.250 (6.35) 0.050 (1.27) iso method a
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83552 8 rev. 1.6, 25-jan-08 sfh1617a vishay semiconductors optocoupler, phototransistor output, high reliability, 5300 v rms , 110 c rated ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national an d international stat utory requirements. 2. regularly and continuously improve the performance of ou r products, processes, distri bution and operating systems with respect to their impact on the health and safety of our employ ees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosp here which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london am endments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international in itiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of c ontinuous improvements to eliminat e the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air ac t amendments of 1990 by the environmental protection agency (epa) in the usa. 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applicat ions. all operating parameters must be validat ed for each customer application by the customer. should the buyer use vishay semi conductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damag es, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associat ed with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
|
